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IRFZ48NPBF hexfet ? power mosfet parameter typ. max. units r jc junction-to-case ??? 1.15 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 thermal resistance www.irf.com 1 v dss = 55v r ds(on) = 14m ? i d = 64a s d g to-220ab advanced hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. advanced process technology ultra low on-resistance dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated lead-free description pd - 94991 absolute maximum ratings parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 64 i d @ t c = 100c continuous drain current, v gs @ 10v 45 a i dm pulsed drain current 210 p d @t c = 25c power dissipation 130 w linear derating factor 0.83 w/c v gs gate-to-source voltage 20 v i ar avalanche current 32 a e ar repetitive avalanche energy 13 mj dv/dt peak diode recovery dv/dt 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbf?in (1.1n?m)
2 www.irf.com s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source curre nt integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 32a, v gs = 0v t rr reverse recovery time ??? 68 100 ns t j = 25c, i f = 32a q rr reverse recovery charge ??? 220 330 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 64 210 starting t j = 25c, l = 0.37mh r g = 25 ? , i as = 32a. (see figure 12) repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) i sd 32a di/d 220a/s, v dd v (br)dss , t j 175c pulse width 400s; duty cycle 2%. this is the destructive value not limited to the thermal limit. this is the thermal limited value. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.058 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 14 m ? v gs = 10v, i d = 32a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 24 ??? ??? s v ds = 25v, i d = 32a ??? ??? 25 a v ds = 55v, v gs = 0v ??? ??? 250 v ds = 44v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v q g total gate charge ??? ??? 81 i d = 32a q gs gate-to-source charge ??? ??? 19 nc v ds = 44v q gd gate-to-drain ("miller") charge ??? ??? 30 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 12 ??? v dd = 28v t r rise time ??? 78 ??? i d = 32a t d(off) turn-off delay time ??? 34 ??? r g = 0.85 ? t f fall time ??? 50 ??? v gs = 10v, see fig. 10 between lead, ??? ??? 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 1970 ??? v gs = 0v c oss output capacitance ??? 470 ??? v ds = 25v c rss reverse transfer capacitance ??? 120 ??? pf ? = 1.0mhz, see fig. 5 e as single pulse avalanche energy ??? 700 190 mj i as = 32a, l = 0.37mh nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance ??? ??? s d g i gss ns

i dss drain-to-source leakage current
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 4 6 8 10 12 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 64a
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 500 1000 1500 2000 2500 3000 3500 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 20 40 60 80 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 32a v = 11v ds v = 27v ds v = 44v ds 0.1 1 10 100 1000 0.2 0.7 1.2 1.7 2.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 t , case temperature ( c) i , drain current (a) c d v ds 90% 10% v gs t d(on) t r t d(off) t f
1 0.1 %

+ -

0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + -

t p v (br)dss i as ! " #$ r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 60 120 180 240 300 360 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 13a 23a 32a
www.irf.com 7
p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ? ?

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8 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the automotive [q101] market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 2/04 lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copack 1- gate 2- collector 3- emitter 4- collector

dimensions are shown in millimeters (inches)

example: in the assembly line "c" t his is an irf 1010 lot code 1789 as s e mb le d on ww 19, 1997 part number as s e mb l y lot code dat e code ye ar 7 = 1997 line c week 19 logo re ct if ie r int e rnat ional note: "p" in assembly line position indicates "lead-free"

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